Wisconsin Alumni Research Foundation

Technology

Hybrid Heterostructure Light-Emitting Devices

Conventional light-emitting diodes (LEDs) are made of an upper ‘p-type’ layer, a middle ‘intrinsic region’ and a bottom ‘n-type’ layer. Such layered structures are called PIN diodes. Curre...
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Zhenqiang Ma, Jung-Hun Seo | P140343US01

Technology

Stretchable Transistors Using Carbon Nanotube Film

Stretchable electronics have many potential applications such as implantable biosensors, wearable devices and flexible displays. Yet critical components like transistors are still based on silicon. Ef...
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Michael Arnold, Feng Xu | P130386US01

Technology

Graphene Nanoribbons with Ultrasmooth Edges

Graphene is atomically thin carbon film with unrivaled high tech potential. One of the strongest and most conductive materials known, it is stronger than diamond but capable of bending like rubber and...
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Michael Arnold, Robert Jacobberger | P140329US01

Technology

Improved Nanotube Film for Field Effect Transistors and More

Semiconducting single-walled carbon nanotubes (s-SWCNTs) are key building blocks for nanoscale technologies given their interesting physical and chemical properties. They are especially promising for ...
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Michael Arnold, Harold Evensen, Gerald Brady, Padma Gopalan, Yongho Joo | P150242US01

Technology

Zinc Oxide Thin Films Have Higher Electron Mobility

Zinc oxide (ZnO) is an inorganic semiconductor with applications in large area photovoltaics and transparent electronics. Producing zinc oxide thin films with excellent electronic properties is challe...
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Paul Evans, Josef Spalenka | P130004US02

Technology

Reusable Virtual Substrates for Growing Semiconductor Devices

‘Virtual substrates’ comprise an underlying growth substrate and one or more metamorphic buffer layers (MBLs) made of semiconductor alloy. The MBL is graded so that its lattice constant initially ...
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Thomas Kuech, Kevin Schulte, Luke Mawst, Tae Wan Kim, Brian Zutter | P130206US01

Technology

Strain-Engineered Ferroelectric Thin Films

Significant efforts are currently underway to create ferroelectric memory (FeRAM) devices from the materials Pb(Zr,Ti)O3 and SrBi2Ta2O9. The main disadvantages of these materials are the volatility of...
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Chang-Beom Eom, Kyoung-Jin Choi, Darrell Schlom, Long-Qing Chen | P05036US

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