UW-Madison researchers have created methods and structures for high temperature SRAM memory using compound semiconductors (like GaN). These high temperature transistors are used to create new forms of...
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There is growing interest in gallium nitride (GaN) as a material for high-frequency and high-power applications, such as high electron mobility transistors (HEMTs) and other field effect transistors (...
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UW-Madison researchers have developed improved Group III-nitride based high electron mobility transistors (HEMTs). The HEMTs combine a high-aluminum-content barrier layer with a recessed gate that pro...
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Group III-nitride semiconductors are characterized by the ability to cover a wide emission wavelength range from the deep ultraviolet (UV) to the near infrared (NIR) (i.e., from 6.2 eV to 0.7 eV). InG...
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Attempts have been made to develop SAM-on-sapphire substrates that include a thin film of SAM on an underlying bulk sapphire support for InGaN growth. However, the SAM films grown by the published met...
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Zinc oxide graphene composite materials have significant interest commercially as they have been demonstrated effective for use in sensors and capacitors. They can act as transparent conductive thin-f...
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III-nitride materials, such as AlN, GaN, InN, and their solid solutions, possess properties that are simply not accessible in any other semiconductors. However, there are unique processing challenges ...
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The feasibility of THz technologies, including high-speed communication, has been curtailed by the problem of high path loss. Theoretically, this hurdle could be overcome if THz receivers were suffici...
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UW-Madison researchers have developed a group III-nitride-based light emitting devices for efficient LED and laser applications. These devices have one or more quantum wells in the active region with ...
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UW-Madison researchers have developed a triblock copolymer strategy for controlling the spacing between CNTs. The triblock copolymers consist of an A-B-A architecture where the B block is the conjugat...
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UW-Madison and University of Chicago researchers have developed a method for directed self-assembly of block copolymer films that relies on obtaining the correct balance of surface energies for the te...
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Oxide thin films have widespread applications in electronic, magnetic, optical materials and devices. Synthesis of oxide thin films via epitaxial growth techniques such as sputtering, molecular beam e...
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UW-Madison researchers have developed a fundamentally new type of mmW emitter, which only shows moderate power drop even at the 300 GHz frequency. The device architecture is a multilayer stack of meta...
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A method of forming a low dielectric constant (low-k) dielectric is disclosed. The method includes providing a substrate and forming a dielectric including porogens over the substrate. While subjectin...
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Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials ...
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Methods for forming carbon nanotube arrays are provided. Also provided are the arrays formed by the methods and electronic devices that incorporate the array as active layers. The arrays are formed by...
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High-quality, single-crystalline silicon-germanium (Si(1-x)Gex) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-c...
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Optoelectronic devices that use very thin single-crystalline inorganic semiconductor films as phonon-absorbing layers in combination with non-lattice optical cavities are provided.
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Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a ...
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A method to make free-standing graphene sheets and the free-standing graphene sheets so formed. The method includes the steps of exfoliating partially oxidized graphene from a carbon-containing electr...
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Conjugated polymers composed of bi-pyridine units linked to 9,9-dialkyl fluorenyl-2,7-diyl units via imine linkages along the polymer backbone are provided. Also provided are semiconducting single-wal...
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Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays, and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in th...
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High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors ...
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Photodetectors based on hydrogen-doped, single-crystalline germanium, including waveguide integrated photodetectors for photonic chip applications are provided. Hydrogen doping provides the single-cry...
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Acoustically mediated spintronic THz emitters in which sound waves, rather than direct laser pulses, give rise to a spin current in a magnetic material via magnetoelastic coupling are provided. The TH...
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