UW-Madison researchers have created methods and structures for high temperature SRAM memory using compound semiconductors (like GaN). These high temperature transistors are used to create new forms of...
Learn More

There is growing interest in gallium nitride (GaN) as a material for high-frequency and high-power applications, such as high electron mobility transistors (HEMTs) and other field effect transistors (...
Learn More

UW-Madison researchers have developed improved Group III-nitride based high electron mobility transistors (HEMTs). The HEMTs combine a high-aluminum-content barrier layer with a recessed gate that pro...
Learn More

Current approaches to quantum error correction rely on large-scale networks of interacting qubits to uniquely identify errors in the array. Robust error correction has two requirements: the error rate...
Learn More

Semiconducting graphene nanoribbons are promising candidates for succeeding and/or complementing silicon (Si) in logic microprocessors and Group III-V compounds in radio frequency devices and for inte...
Learn More

Group III-nitride semiconductors are characterized by the ability to cover a wide emission wavelength range from the deep ultraviolet (UV) to the near infrared (NIR) (i.e., from 6.2 eV to 0.7 eV). InG...
Learn More

Compound III-V semiconductors are foundational materials employed for state-of- the-art optoelectronic devices. Planar ultra-thin heterostructure materials, called quantum wells (QWs), are currently t...
Learn More

Optical metasurfaces enable unprecedented control over electromagnetic wave manipulation. By leveraging powerful resonance mechanisms supported by subwavelength structures arranged in two-dimensional ...
Learn More

Attempts have been made to develop SAM-on-sapphire substrates that include a thin film of SAM on an underlying bulk sapphire support for InGaN growth. However, the SAM films grown by the published met...
Learn More

UW-Madison researchers have developed systems and methods for the optical control of qubits and other quantum particles with a combination of spatial light modulators (SLM) and fast deflectors for qua...
Learn More

Zinc oxide graphene composite materials have significant interest commercially as they have been demonstrated effective for use in sensors and capacitors. They can act as transparent conductive thin-f...
Learn More

Typically, bidirectional switching elements are fabricated using two FET devices, for example, arranged in series with opposite polarities, each device shunted by a diode to steer current to the prope...
Learn More

III-nitride materials, such as AlN, GaN, InN, and their solid solutions, possess properties that are simply not accessible in any other semiconductors. However, there are unique processing challenges ...
Learn More

The feasibility of THz technologies, including high-speed communication, has been curtailed by the problem of high path loss. Theoretically, this hurdle could be overcome if THz receivers were suffici...
Learn More

UW-Madison researchers have developed new methods of forming films of aligned elongated nanoparticles. These films may include carbon nanotubes and could find use in electronic devices, such as trans...
Learn More

UW-Madison researchers have developed a group III-nitride-based light emitting devices for efficient LED and laser applications. These devices have one or more quantum wells in the active region with ...
Learn More

Semiconductor deep-ultraviolet (DUV) light-emitting diodes (LEDs) operating at sub-250 nm wavelengths are of interest due to their applications in areas such as sterilization, biosensing, medical trea...
Learn More

UW-Madison researchers have designed optoelectronic transducers that convert a femtosecond (fs)-timescale laser pulse into an a.c. electrical current pulse with an extremely high frequency and a high ...
Learn More

UW-Madison researchers have developed a compact thermal laser on a chip capable of steering emitted thermal radiation at a continuous range of angles through the application of a voltage. The device i...
Learn More

UW-Madison researchers have developed a triblock copolymer strategy for controlling the spacing between CNTs. The triblock copolymers consist of an A-B-A architecture where the B block is the conjugat...
Learn More

UW-Madison researchers have developed a new synthesis method, hybrid PLD (Pulsed Laser Deposition), that synergistically combines the advantages of thermal evaporation and conventional PLD to overcome...
Learn More

UW-Madison and University of Chicago researchers have developed a method for directed self-assembly of block copolymer films that relies on obtaining the correct balance of surface energies for the te...
Learn More

Oxide thin films have widespread applications in electronic, magnetic, optical materials and devices. Synthesis of oxide thin films via epitaxial growth techniques such as sputtering, molecular beam e...
Learn More

Silicon-Germanium (SiGe) heterostructures are used for many purposes in the modern electronics industry, forming the basis of devices such as SiGe heterojunction bipolar transistors and Si/SiGe modula...
Learn More

UW researchers have invented a Cesium Lattice Optical Clock (CLOC) for high performance and simple operation in a compact form factor. The novel design uses a “forbidden” optical transition in Cs ...
Learn More