UW-Madison researchers have designed optoelectronic transducers that convert a femtosecond (fs)-timescale laser pulse into an a.c. electrical current pulse with an extremely high frequency and a high ...
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UW-Madison researchers have developed a new synthesis method, hybrid PLD (Pulsed Laser Deposition), that synergistically combines the advantages of thermal evaporation and conventional PLD to overcome...
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Oxide thin films have widespread applications in electronic, magnetic, optical materials and devices. Synthesis of oxide thin films via epitaxial growth techniques such as sputtering, molecular beam e...
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Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high q...
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The unique properties of vanadium dioxide (VO2) lend it to a variety of applications in materials physics and solid-state electronics. Namely it exhibits a sharp metal-insulator transition (MIT) above...
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Spintronic devices based on metallic antiferromagnets having a non-collinear spin structure are provided. Also provided are methods for operating the devices. The spintronic devices are based on a bil...
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Magnetic switching devices, including magnetic memory devices, are provided. The devices use high-quality crystalline films of 4d or 5d transition metal perovskite having a strong spin-orbit coupling ...
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The discovery of two-dimensionally confined charge carriers has opened an exciting field of new research and various device applications. In particular, two-dimensional electron gas (2DEG) is used in ...
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The unique properties of vanadium dioxide (VO2) mean it could one day outperform silicon and enable next-generation, ultralow-power devices. A key advantage of this material is that above 341 kelvin �...
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Significant efforts are currently underway to create ferroelectric memory (FeRAM) devices from the materials Pb(Zr,Ti)O3 and SrBi2Ta2O9. The main disadvantages of these materials are the volatility of...
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Voltage-controlled spin field effect transistors (“spin transistors”) and methods for their use in switching applications are provided. In the spin transistors, spin current is transported from a ...
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Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxi...
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Magnetoelectric devices based on piezoelectric/magnetostrictive bilayers are provided. Also provided are methods of using the devices to modulate or to sense the magnetization of the magnetostrictive ...
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The semiconductor industry constantly is seeking new methods to improve memory speed and efficiency that are compatible with large-scale fabrication processes and environmentally-friendly.Currently, F...
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