Semiconductors & Integrated Circuits
Epitaxial Growth Of High Quality Vanadium Dioxide Films With Template Engineering
WARF: P160069US01
Inventors: Chang-Beom Eom, Daesu Lee
The Wisconsin Alumni Research Foundation (WARF) is seeking commercial partners interested in developing methods of fabricating crack-free VO2 epitaxial film for use in high speed switches.
Overview
The unique properties of vanadium dioxide (VO2) lend it to a variety of applications in materials physics and solid-state electronics. Namely it exhibits a sharp metal-insulator transition (MIT) above room temperature, accompanied by a large and ultrafast change of electrical resistance. For this reason V02, particularly in thin film form, is well suited for use in high speed electronic and optoelectronic switches (e.g., in chemical sensors and memory chips).
However, critical to any practical application for VO2 is the ability to grow high quality epitaxial films. To date this has been difficult to achieve. Lattice mismatch with the growth substrate causes cracks to form throughout the films and other degradations that compromise reliable device performance.
However, critical to any practical application for VO2 is the ability to grow high quality epitaxial films. To date this has been difficult to achieve. Lattice mismatch with the growth substrate causes cracks to form throughout the films and other degradations that compromise reliable device performance.
The Invention
UW–Madison researchers have developed methods of growing high quality VO2 epitaxial film on an intervening tin oxide (SnO2) template. The large lattice mismatch between the materials confines structural defects to the interface, while the remainder of the film remains crack- and strain-free. This structural uniformity is highly desirable for creating reliable, high performance devices including high speed switches.
Applications
- Fabrication of VO2 thin film for use in high speed optoelectronic switches, electronics oscillators, metamaterials, memristive devices, thermal and chemical sensors
Key Benefits
- New method reduces and confines cracks.
- Enables quality films to be grown to commercially practical thickness
- Produces film better able to absorb stresses and strains of MIT
- Should lead to improved and sustained performance
Stage of Development
Homogeneous, crystalline and crack-free VO2 films have been grown using the new method.
The development of this technology was supported by WARF Accelerator. WARF Accelerator selects WARF's most commercially promising technologies and provides expert assistance and funding to enable achievement of commercially significant milestones. WARF believes that these technologies are especially attractive opportunities for licensing.
The development of this technology was supported by WARF Accelerator. WARF Accelerator selects WARF's most commercially promising technologies and provides expert assistance and funding to enable achievement of commercially significant milestones. WARF believes that these technologies are especially attractive opportunities for licensing.
Additional Information
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For current licensing status, please contact Michael Carey at [javascript protected email address] or 608-960-9867