Semiconductors & Integrated Circuits
Vanadium Dioxide Design Solution for Ultrafast Switches
WARF: P170254US01
Inventors: Chang-Beom Eom, Daesu Lee
The Wisconsin Alumni Research Foundation (WARF) is seeking commercial partners interested in developing vanadium dioxide-based switches characterized by isostructural metal-insulator transition near room temperature.
This technology overcomes a longstanding challenge and potentially enables devices with unprecedented speed and endurance.
Overview
The unique properties of vanadium dioxide (VO2) mean it could one day outperform silicon and enable next-generation, ultralow-power devices. A key advantage of this material is that above 341 kelvin – near room temperature – bulk VO2 is a metal. But as soon as the material is cooled below 341 k, VO2 turns into an insulator. The superfast change in resistance means that VO2 could be very powerful in a variety of applications involving high speed optoelectronic switches.
However, the metal-insulator transition is accompanied by an undesirable change in crystal structure from rutile to monoclinic, which to date has limited the material’s practical applications.
However, the metal-insulator transition is accompanied by an undesirable change in crystal structure from rutile to monoclinic, which to date has limited the material’s practical applications.
The Invention
UW–Madison researchers have designed VO2 heterostructures capable of metal-insulator transition near room temperature in practical thin films. The heterostructures are made of multiple bilayers of V02 engineered to have different rutile-to-monoclinic structural transition temperatures.
The bilayers can be incorporated into a variety of electrical switches including capacitors, planar switches and field effect switches, in integrated circuits for memory devices (e.g., CMOS chips) and communication devices. In each of these devices the conversion of the bilayer from its electrically insulating to conducting metallic state (and vice versa) changes the resistance/conductance of the bilayer, thereby modulating current flow or capacitance.
The bilayers can be incorporated into a variety of electrical switches including capacitors, planar switches and field effect switches, in integrated circuits for memory devices (e.g., CMOS chips) and communication devices. In each of these devices the conversion of the bilayer from its electrically insulating to conducting metallic state (and vice versa) changes the resistance/conductance of the bilayer, thereby modulating current flow or capacitance.
Applications
- Optoelectronic switches, Mott transistors, femtosecond switches and more
Key Benefits
- Maximizes the potential of V02 as a next-generation material
Stage of Development
The development of this technology was supported by WARF Accelerator. WARF Accelerator selects WARF's most commercially promising technologies and provides expert assistance and funding to enable achievement of commercially significant milestones. WARF believes that these technologies are especially attractive opportunities for licensing.
Additional Information
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For current licensing status, please contact Michael Carey at [javascript protected email address] or 608-960-9867