Semiconductors & Integrated Circuits
Contact Photolithography-Based Nanopatterning Using Photoresist Features Having Re-Entrant Profiles
WARF: P180144US01
Inventors: Zhenqiang Ma, Yei Hwan Jung
The Invention
Patterning methods for forming patterned device substrates are provided. Also provided are devices made using the methods. The methods utilize photoresist features have re-entrant profiles to form a secondary metal hard mask that can be used to pattern an underlying device substrate.
Additional Information
For More Information About the Inventors
For current licensing status, please contact Jeanine Burmania at [javascript protected email address] or 608-960-9846