Semiconductors & Integrated Circuits
P-N Diodes And P-N-P Heterojunction Bipolar Transistors With Diamond Collectors And Current Tunneling Layers
WARF: P180281US01
Inventors: Zhenqiang Ma
The Invention
P-N diodes that include p-type doped diamond and devices, such as p-n-p heterojunction bipolar transistors, that incorporate the p-n diodes are provided. In the p-n diodes, the diamond at the p-n junction has a positive electron affinity and is passivated by a thin layer of inorganic material that provides a tunneling layer that passivates the bonding interface states, without hindering carrier transport across the interface.
Additional Information
For More Information About the Inventors
For current licensing status, please contact Jeanine Burmania at [javascript protected email address] or 608-960-9846