Information Technology
Anisotropic Strain-Driven Magnetoelectric Devices
WARF: P190085US01
Inventors: Chang-Beom Eom, Mark Rzchowski, Julian Irwin, Shane Lindemann
The Invention
Magnetoelectric devices based on piezoelectric/magnetostrictive bilayers are provided. Also provided are methods of using the devices to modulate or to sense the magnetization of the magnetostrictive material. The devices include an island of magnetostrictive material that is strain-coupled to a thin layer of a piezoelectric material at an interface. A bottom electrode is placed in electrical communication with one surface of the piezoelectric film, and an unpaired top electrode is placed in electrical communication with a second, opposing surface of the piezoelectric film.
Additional Information
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Tech Fields
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