Semiconductors & Integrated Circuits
Spin Transistors Based On Voltage Controlled Magnon Transport In Multiferroic Antiferromagnets
WARF: P200170US01
Inventors: Chang-Beom Eom, Tianxiang Nan, Jonathon Schad
The Invention
Voltage-controlled spin field effect transistors (“spin transistors”) and methods for their use in switching applications are provided. In the spin transistors, spin current is transported from a spin injection contact to a spin detection contact through a multiferroic antiferromagnetic channel via magnon propagation. The spin current transport is modulated by the application of a gate voltage that increases the number of domain boundaries the multiferroic antiferromagnetic material.
Additional Information
For More Information About the Inventors
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