Semiconductors & Integrated Circuits
HIGH-FREQUENCY GROUP III-NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTORS WITH HIGH-ALUMINUM CONCENTRATION BARRIERS AND RECESSED GATES
WARF: P230152US01
Inventors: Chirag Gupta, Swarnav Mukhopadhyay, Shubhra Pasayat, Jiahao Chen
The Invention
UW-Madison researchers have developed improved Group III-nitride based high electron mobility transistors (HEMTs). The HEMTs combine a high-aluminum-content barrier layer with a recessed gate that provides the HEMTs with a very low channel sheet resistance and enables high-power, high-frequency operation. A thick barrier layer increases the distance between the two-dimensional electron gas (2DEG) channel and traps at the exposed surface of the group III-nitride barrier layer, thereby reducing or eliminating current collapse. The recessed gate provides a reduced barrier layer thickness below the gate, reducing the distance between the gate and allowing for good modulation of the 2DEG by the gate.
Additional Information
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Tech Fields
For current licensing status, please contact Jeanine Burmania at [javascript protected email address] or 608-960-9846