Information Technology
SILICON-GERMANIUM HETEROSTRUCTURES WITH SHEAR STRAIN AND GERMANIUM CONCENTRATION OSCILLATIONS FOR ENHANCED VALLEY SPLITTING
WARF: P230400US01
Inventors: Mark Friesen, Benjamin Woods, Mark Eriksson, Robert Joynt, Emily Joseph
Overview
Quantum dot qubits in Si/SiGe quantum wells are an attractive platform for quantum computation due to their long coherence times, fast gate operations, nuclear-spin free isotopes, and compatibility with the microelectronics industry.
The Invention
UW-Madison researchers have designed semiconductor heterostructures having Ge-seeded, shear-strained silicon quantum wells for enhanced valley-splitting. They have also designed gate-controlled qubits based on the heterostructures and quantum computing systems based on the qubits.
Additional Information
For More Information About the Inventors
Tech Fields
For current licensing status, please contact Emily Bauer at [javascript protected email address] or 608-960-9842