WARF TECHNOLOGIES

UW-Madison researchers have created a group III-N based pseudo-substrate using vertical and lateral etch approaches. First they create a porous, compliant group III-nitride layer over which a relaxed group III-nitride layer can be regrown. The porosification of the group III-nitride increases its in­ plane lattice constant enabling the epitaxial regrowth of a group III-nitride having an enhanced alloy composition. The methods preserve the surface quality of the pseudo­ substrate and produce a uniform porosity across the porosified layer.

• Shubhra Pasayat
• Chirag Gupta

• Semiconductors & Integrated Circuits : Components & materials