Semiconductors & Integrated Circuits
ULTRAHIGH BANDGAP ALGAN CHANNEL HEMTS WITH LOW CONTACT RESISTANCE
WARF: P250192US01
Inventors: Shubhra Pasayat, Swarnav Mukhopadhyay, Chirag Gupta, Khush Gohel
The Invention
UW-Madison researchers have created structures and methods for AlGaN channel high electron mobility transistors (HEMTs). Typically, extreme bandgap AlGaN channel HEMTs show very high ohmic contact resistance, which limits the transistor's performance as a power and RF device. Introducing partial relaxation in the epitaxial structure enables very low contact resistance without compromising the transistor's performance. Moreover, a fully relaxed regrown contact layer grown on a fully strained epitaxial structure of HEMTs reduces the contact resistance further.
Additional Information
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Tech Fields
For current licensing status, please contact Jeanine Burmania at jeanine@warf.org or 608-960-9846