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136 Results for 'Semiconductors & Integrated Circuits'
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Technology
P-N Diodes And P-N-P Heterojunction Bipolar Transistors With Diamond Collectors And Current Tunneling Layers
P-N diodes that include p-type doped diamond and devices, such as p-n-p heterojunction bipolar transistors, that incorporate the p-n diodes are provided. In the p-n diodes, the diamond at the p-n junc...
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Zhenqiang Ma | P180281US01
Technology
Methods And Systems For Transmission And Detection Of Free Radicals
The present disclosure provides systems and methods for characterizing the interaction of free radicals with various materials and the use of known interactions to isolate free radical generation from...
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J. Leon Shohet, Michael Sussman, Faraz Choudhury, Benjamin Minkoff, Grzegorz Sabat, Joshua Blatz | P170004US02
Technology
Aluminum Nitride-Aluminum Oxide Layers For Enhancing The Efficiency Of Group Iii-Nitride Light-Emitting Devices
Light-emitting devices having a multiple quantum well (MQW) diode structure and methods of making and using the devices are provided. The devices include aluminum nitride/aluminum oxide bilayers on th...
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Zhenqiang Ma, Kwangeun Kim | P180041US01
Technology
Narrowband, Acoustically Mediated Spintronic Terahertz Emitter
Acoustically mediated spintronic THz emitters in which sound waves, rather than direct laser pulses, give rise to a spin current in a magnetic material via magnetoelastic coupling are provided. The TH...
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Jiamian Hu, Shihao Zhuang | P200099US01
Technology
Spin Transistors Based On Voltage Controlled Magnon Transport In Multiferroic Antiferromagnets
Voltage-controlled spin field effect transistors (“spin transistors”) and methods for their use in switching applications are provided. In the spin transistors, spin current is transported from a ...
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Chang-Beom Eom, Tianxiang Nan, Jonathon Schad | P200170US01
Technology
Flexible Transistors With Near-Junction Heat Dissipation
Flexible transistors and electronic circuits incorporating the transistors are provided. The flexible transistors promote heat dissipation from the active regions of the transistors while preserving t...
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Zhenqiang Ma, Huilong Zhang, Shaoqin Gong | P200154US01
Technology
Integration Of Semiconductor Membranes With Piezoelectric Substrates
Piezoelectrically actuated devices constructed from thin semiconductor membranes bonded directly to piezoelectric substrates are provided. Methods for fabricating these devices are also provided. The ...
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Max Lagally, Abhishek Bhat, Frank Flack, Shelley Scott, Robert Blick | P200105US01
Technology
Arrays Of High-Aspect-Ratio Germanium Nanostructures With Nanoscale Pitch And Methods For The Fabrication Thereof
Methods for fabricating thin, high-aspect-ratio Ge nanostructures from high-quality, single-crystalline Ge substrates are provided. Also provided are grating structures made using the methods. The met...
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Max Lagally, Francesca Cavallo, Vijay Saradhi Mangu | P200069US01
Technology
Self-Assembled Helical Slow-Wave Structures For High-Frequency Signals
Traveling-wave tube amplifiers for high-frequency signals, including terahertz signals, and methods for making a slow-wave structure for the traveling-wave tube amplifiers are provided. The slow-wave ...
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Max Lagally, Matthew Dwyer, Francesca Cavallo, Daniel van der Weide, Abhishek Bhat | P190271US01
Technology
Fault Tolerant Charge Parity Qubit
A quantum computer architecture employs logical qubits that are constructed from a concatenation of doubly periodic Josephson junction circuits. The series concatenation of the doubly periodic Josephs...
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Lev Ioffe, Lara Faoro, Robert McDermott | P180262US02
Technology
Anisotropic Strain-Driven Magnetoelectric Devices
Magnetoelectric devices based on piezoelectric/magnetostrictive bilayers are provided. Also provided are methods of using the devices to modulate or to sense the magnetization of the magnetostrictive ...
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Chang-Beom Eom, Mark Rzchowski, Julian Irwin, Shane Lindemann | P190085US01
Technology
Metal-Organic Pulsed Laser Deposition For Stoichiometric Complex Oxide Thin Films
Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxi...
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Chang-Beom Eom, Jungwoo Lee | P170257US01
Technology
Electroplated Helical Slow-Wave Structures For High Frequency Signals
Traveling-wave tube amplifiers and methods for making slow-wave structures for the amplifiers are provided. The SWSs include helical conductors that are self-assembled via the release of stressed elec...
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Max Lagally, Matthew Dwyer, Daniel van der Weide, Abhishek Bhat, Francesca Cavallo, Divya Prakash | P200232US01
Technology
Seeded Solid-Phase Crystallization Of Transparent Conducting Vanadate Perovskites
Transparent, electrically conductive vanadium oxide-based perovskite films and methods of making the vanadium oxide-based perovskite films are provided. Transparent conducting vanadate perovskites are...
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Paul Evans, Thomas Kuech, Donald Savage, Yajin Chen, Samuel Marks | P190259US02
Technology
Semiconductor Quantum Dot Computer-Aided Engineering (CAE) Simulation Tool
With the continued development of semiconductor technology, it is now possible to fabricate nano-scale material structures called Quantum Dots (QDs). The properties of QDs have earned them the charac...
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Wei Li, Samuel Belling, Heather Cihak | T180055US02
Technology
Nitride Based Light-Emitting Diodes with Reduced Efficiency Droop
Blue and UV light-emitting diodes (LEDs) are key to modern, energy-saving lighting and are used in a range of applications including efficient home, farm and building lighting, high-speed networking, ...
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Zhenqiang Ma, Dong Liu | P180227US01
Technology
Vanadium Dioxide Design Solution for Ultrafast Switches
The unique properties of vanadium dioxide (VO2) mean it could one day outperform silicon and enable next-generation, ultralow-power devices. A key advantage of this material is that above 341 kelvin �...
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Chang-Beom Eom, Daesu Lee | P170254US01
Technology
Next-Generation Electronics: Realizing 2-D Hole Gas in Oxide Materials
The discovery of two-dimensionally confined charge carriers has opened an exciting field of new research and various device applications. In particular, two-dimensional electron gas (2DEG) is used in ...
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Chang-Beom Eom, Hyungwoo Lee | P170256US01
Technology
Hybrid Heterostructure Light-Emitting Devices
Conventional light-emitting diodes (LEDs) are made of an upper ‘p-type’ layer, a middle ‘intrinsic region’ and a bottom ‘n-type’ layer. Such layered structures are called PIN diodes. Curre...
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Zhenqiang Ma, Jung-Hun Seo | P140343US01
Technology
Antenna-Based Power Generation with Nanoscale Rectifying Elements
“Rectennas” are antennas that can receive radio signals and rectify them to generate electrical power for wireless power transfer. Potential applications for rectennas range from large-scale power...
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Robert Blick, Chulki Kim, Jonghoo Park | P100171US01
Technology
Large-Area, Nanoperforated Graphene Materials for Semiconducting Applications
Recently, interest and research in graphene has grown rapidly due to its outstanding electrical properties. Graphene, a two-dimensional carbon-based material, has high tensile strength, stiffness, opt...
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Michael Arnold, Padma Gopalan, Myungwoong Kim, Nathaniel Safron | P100012US02
Technology
New Method for Direct Patterning in Block Copolymer Lithography
Most microelectronic devices are fabricated using top-down processes such as photolithography. Current top-down processes face growing limitations as the demand for smaller scale applications increase...
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Padma Gopalan, Eungnak Han | P100296US02
Technology
Vertical Cavity Light Sources Based on Stacked Membranes
Improvements in technologies such as cell phones, laptops and small digital electronics are the result of the increasing capability of electronics and photonics. However, there is a continuing need fo...
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Zhenqiang Ma, Weidong Zhou | P08398US
Technology
Epitaxial Growth Of High Quality Vanadium Dioxide Films With Template Engineering
The unique properties of vanadium dioxide (VO2) lend it to a variety of applications in materials physics and solid-state electronics. Namely it exhibits a sharp metal-insulator transition (MIT) above...
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Chang-Beom Eom, Daesu Lee | P160069US01
Technology
Superior Nanotube Film for High Performance Field Effect Transistors
Single-walled carbon nanotubes (SWCNTs) are key building blocks for nanoscale technologies given their interesting physical and chemical properties. SWCNTs are especially promising for high speed and ...
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Michael Arnold, Padma Gopalan, Gerald Brady, Yongho Joo | P140200US01