Wisconsin Alumni Research Foundation

Technology

New Surface-Modifying Film for BCP Formation

Block copolymers (BCPs) self-assemble into well-defined, highly regular and dense nanostructures. Such BCP arrays are useful for fabricating electronic devices like magnetic storage media, quantum dot...
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Padma Gopalan, Eungnak Han, Myungwoong Kim | P130124US01

Technology

Degradable Neutral Layer for BCP Lithography

The lithographic process is one of the most powerful technologies of the digital electronics era. Lithography allows hundreds of millions of components to be fabricated on a single chip with pattern f...
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Padma Gopalan, Daniel Sweat, Jonathan Choi, Myungwoong Kim | P130174US01

Technology

Reusable Virtual Substrates for Growing Semiconductor Devices

‘Virtual substrates’ comprise an underlying growth substrate and one or more metamorphic buffer layers (MBLs) made of semiconductor alloy. The MBL is graded so that its lattice constant initially ...
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Thomas Kuech, Kevin Schulte, Luke Mawst, Tae Wan Kim, Brian Zutter | P130206US01

Technology

Patterned Graphene for Field Effect Transistors

Interest in graphene has surged due to its outstanding electrical properties. Graphene is a two-dimensional, carbon-based material with high tensile strength, stiffness, optical transparency and therm...
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Michael Arnold, Padma Gopalan, Nathaniel Safron, Myungwoong Kim, Jonathan Choi | P110242US01

Technology

Flexible Thin-Film Transistors Are Doped and Strained

Fast, flexible electronics operating at radio frequencies (greater than 1 GHz) are attractive because of their versatility, power savings and wide applicability. Uses include wireless and high-speed c...
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Zhenqiang Ma, Max Lagally, Jung-Hun Seo | P130145US01

Technology

Nanoelectromechanical Switch in Co-Planar Waveguide

Microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS) have been used to create mechanical resonators for switching, filtering and other purposes in electrical systems. NEMS/ME...
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Robert Blick, Hua Qin, Hyun-Seok Kim | P07084US

Technology

Strain-Engineered Ferroelectric Thin Films

Significant efforts are currently underway to create ferroelectric memory (FeRAM) devices from the materials Pb(Zr,Ti)O3 and SrBi2Ta2O9. The main disadvantages of these materials are the volatility of...
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Chang-Beom Eom, Kyoung-Jin Choi, Darrell Schlom, Long-Qing Chen | P05036US

Technology

Organoelement Resists for EUV Lithography

Extreme ultraviolet (EUV) lithography is one of the most promising techniques for creating semiconductor devices, integrated circuits and microelectronic devices with nanoscale features (i.e., smaller...
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Paul Nealey, Franco Cerrina, Lin Zhu, Junyan Dai, Christopher Ober | P04335US

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